Title :
Electrical and Temperature Stress Effects on Class-AB Power Amplifier Performances
Author :
Yu, Chuanzhao ; Yuan, J.S.
Author_Institution :
Freescale Semicond. Inc, Boca Raton, FL
fDate :
6/1/2007 12:00:00 AM
Abstract :
Normalized degradations of drain efficiency and output power as a function of conduction angle, maximum drain current, and maximum output voltage are modeled. Good agreement between the model predictions and Cadence radio-frequency simulation results is obtained. The output power and efficiency of class-AB power amplifiers (PAs) degrade with channel hot electron stress due to reduced conduction angle, drain current, and output voltage. The degradation is enhanced at high temperature. In addition, the PA third-order input intercept point and adjacent channel power ratio all decrease with stress
Keywords :
hot carriers; integrated circuit modelling; power amplifiers; Cadence radio-frequency simulation results; RF simulation; channel hot electron stress; class-AB power amplifier performances; conduction angle; drain efficiency; electrical stress effects; maximum drain current; maximum output voltage; temperature stress effects; Degradation; Electrons; Power amplifiers; Power generation; Predictive models; Radio frequency; Radiofrequency amplifiers; Stress; Temperature; Voltage; Class-AB power amplifier (PA); RF simulation; conduction angle; power efficiency; third-order intercept point;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.896601
