Title :
GaInAsSb-AlGaAsSb distributed feedback lasers emitting near 2.4 μm
Author :
Hummer, M. ; Rossner, K. ; Benkert, A. ; Forchel, A.
Author_Institution :
Technische Phys., Univ. Wurzburg, Germany
Abstract :
We have investigated fabrication and characteristics of continuous wave (cw) GaInAsSb-AlGaAsSb distributed feedback (DFB) lasers in the 2.4-μm range. Single-mode DFB emission is obtained without overgrowth by first order Cr-Bragg gratings on both sides of a laser ridge. The cw threshold currents for a cavity with a length of 800 μm and a width of 4 μm are around 30 mA. At 20/spl deg/C and at an injection current of 190 mA output powers of 8.5 mW were realized. Monomode emission with a side-mode suppression ratio (SMSR) of 33 dB has been obtained.
Keywords :
Bragg gratings; III-V semiconductors; aluminium compounds; chromium; distributed feedback lasers; gallium compounds; indium compounds; laser cavity resonators; laser modes; optical fabrication; semiconductor lasers; waveguide lasers; 190 mA; 2.4 nm; 20 degC; 4 mum; 8.5 mW; 800 mum; Cr; Cr-Bragg gratings; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb distributed feedback lasers; cw threshold currents; laser ridge; monomode emission; semiconductor lasers; side-mode suppression ratio; single-mode DFB emission; Distributed feedback devices; Epitaxial growth; Etching; Gas lasers; Gratings; Laser feedback; Laser modes; Optical device fabrication; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.821239
