Title :
Room-temperature 2.81-μm continuous-wave operation of GaInAsSb-AlGaAsSb laser
Author :
Grau, M. ; Lin, Chong ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. of Munich, Garching, Germany
Abstract :
GaInAsSb-AlGaAsSb multiple quantum-well (QW) lasers with an emission wavelength of 2.81 μm are reported. The ridge waveguide lasers with highly strained QWs show continuous-wave laser emission up to 25/spl deg/C; in pulsed mode, the lasers operate up to 60/spl deg/C. For pulsed operation, a threshold current density of 360 A/cm2 is found for devices with 30-μm stripe width and 2-mm cavity length at room temperature. A low threshold current density at infinite length of 248 A/cm2 is derived.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high-speed optical techniques; indium compounds; laser cavity resonators; laser modes; quantum well lasers; semiconductor quantum wells; waveguide lasers; 2 mm; 2.81 mum; 20 degC; 30 mum; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb laser; continuous-wave operation; midinfrared lasers; multiple quantum-well lasers; pulsed mode; ridge waveguide lasers; room temperature; semiconductor lasers; strained QW; Chemical lasers; Gas lasers; Laser modes; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current; Waveguide lasers; X-ray lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.823094
