Title :
A charge-based large-signal bipolar transistor model for device and circuit simulation
Author :
Jeong, Hanggeun ; Fossum, Jerry G.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
1/1/1989 12:00:00 AM
Abstract :
A model derived from one-dimensional regional analyses of ambipolar carrier transport with minimal empiricism is presented. Model verification and parameter extraction, based on test devices representative of the advanced bipolar technology, are described and used to demonstrate the predictive potential of the model. The physical model serves as a basis for seminumerical mixed-mode device/circuit simulation, as well as for a model hierarchy, in CAD applications
Keywords :
bipolar transistors; electronic engineering computing; semiconductor device models; CAD; advanced bipolar technology; ambipolar carrier transport; bipolar transistor; charge based large signal model; circuit simulation; model hierarchy; one-dimensional regional analyses; parameter extraction; seminumerical mixed-mode device/circuit simulation; Bipolar transistors; Circuit simulation; Circuit testing; Computational modeling; Coupling circuits; Data mining; Helium; Parameter extraction; Predictive models; SPICE;
Journal_Title :
Electron Devices, IEEE Transactions on
