Minority-carrier control gate turn-off thyristor

A turn-off thyristor using a lateral configuration with a p⁺ -region and an n⁺-region in the n-base is discussed. In this thyristor, it is difficult for minority carriers (holes) to get to the p-base without passing through the p⁺-region in the n-base during the on-state. The turn-off operation is carried out by extracting minority carriers from the control gate formed on the p⁺ -region, thus blocking hole supply to the p-base. This turn-off thyristor, which is explained by a three-transistor model, has a very small anode current tail, results in fast turn-off with little power dissipation. Even faster turn-off operation can be realized by the connection of an external diode between the control gate and the conventional gate