• DocumentCode
    890918
  • Title

    Intrinsic transconductance extraction for deep-submicrometer MOSFETs

  • Author

    Chung, J. ; Jeng, M.-C. ; May, G. ; Ko, P.K. ; Hu, C.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • Volume
    36
  • Issue
    1
  • fYear
    1989
  • fDate
    1/1/1989 12:00:00 AM
  • Firstpage
    140
  • Lastpage
    142
  • Abstract
    Significant error in the extracted intrinsic transconductance gmi can arise from source-drain resistance asymmetry. A simple procedure to either correct for or avoid this source of error is outlined. Using deep-submicrometer devices, experimental results that demonstrate the severity of the potential error and to verify the applicability of the proposed technique are presented. A method which extracts the individual values of the source and drain resistances is also described
  • Keywords
    electric admittance measurement; insulated gate field effect transistors; deep-submicrometer MOSFETs; error; intrinsic transconductance; source-drain resistance asymmetry; Electrical resistance measurement; Equations; Error correction; Fabrication; Forward contracts; MOSFETs; Physics; Temperature; Transconductance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.21194
  • Filename
    21194
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=890918