Design and fabrication of 0.25-μm MESFETs with parallel and π-gate structures

Author

Nagarajan, Rao M. ; Van Hove, James M. ; Rask, Steven D. ; Thomas, G.P. ; Cibuzar, Gregory T. ; Jorgenson, Jon D. ; Chang, Edward Y. ; Pande, Krishna P.

Author_Institution

Unisys Corp., St. Paul, MN, USA

Volume

36

Issue

1

fYear

1989

fDate

1/1/1989 12:00:00 AM

Firstpage

142

Lastpage

145

Abstract

The design and fabrication of 0.25-μm MESFETs with a channel length of 2.3 μm is reported. A comparison of the effect of the FET geometry (π and parallel gate structures) on device performance is described. MESFETs were fabricated using a hybrid optical/e-beam lithography process on active layers grown by MBE. FETs show a transconductance of 260 mS/mm and a threshold voltage of -3.0 V. No short-channel effects were observed. From RF measurements, an f _max of 90-120 GHz was obtained. Excellent device yield across a 3-in wafer and wafer to wafer was achieved

Keywords

Schottky gate field effect transistors; electron beam lithography; photolithography; solid-state microwave devices; π-gate structures; 0.25 micron; 2.3 micron; 260 mS; 90 to 120 GHz; MBE; MM-wave MESFET; RF measurements; active layers; channel length; design; device yield; fabrication; hybrid optical/e-beam lithography; parallel gate structures; threshold voltage; transconductance; FETs; Fabrication; Gallium arsenide; Lithography; MESFETs; Molecular beam epitaxial growth; Optical beams; Optical buffering; Optical design; Optical receivers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.21195

Filename

21195