Title :
Base spreading resistance of polysilicon self-aligned bipolar transistors
Author :
Greeneich, Edwin W.
Author_Institution :
Center for Solid-State Electron. Res., Arizona State Univ., Tempe, AZ, USA
fDate :
1/1/1989 12:00:00 AM
Abstract :
The base spreading resistance and its variation with current are analyzed for bipolar transistor structures in which the extrinsic base contact region extends completely around the emitter region. An analytic expression for the resistance is derived that represents the limiting case of a small rectangular emitter structure with corner-rounding. Results of the analysis show good agreement with numerical simulation results. This approach has application in the modeling of modern small-geometry bipolar transistors
Keywords :
bipolar transistors; electric resistance; elemental semiconductors; semiconductor device models; silicon; analytical model; base spreading resistance; corner-rounding; extrinsic base contact region; modeling; numerical simulation; polysilicon self-aligned bipolar transistors; small rectangular emitter; Bipolar integrated circuits; Bipolar transistors; Boundary conditions; Contact resistance; Current density; Equations; Geometry; Lithography; Numerical simulation; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
