Title :
Resistive-gate-induced thermal noise in IGFETs
fDate :
8/1/1981 12:00:00 AM
Abstract :
The contribution to the noise in the drain current of an IGFET caused by thermal fluctuations in a resistive gate is calculated. It is found that such induced noise becomes important when the gate conductance becomes comparable to the device transconductance.
Keywords :
Electron device noise; Insulated gate field effect transistors; Thermal noise; electron device noise; insulated gate field effect transistors; thermal noise; Circuit noise; Dielectrics and electrical insulation; Electrons; Semiconductor device noise; Solid state circuits; Switching circuits; Thermal resistance; Threshold voltage; Transconductance; Voltage fluctuations;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1981.1051611
