Title :
A high-speed Hi-CMOSII 4K static RAM
Author :
Minato, Osamu ; Masuhara, Toshiaki ; Sasaki, Toshio ; Sakai, Yoshio ; Yoshizaki, Kayoko ; Yoshizaki, Kazuo
Abstract :
Using advanced high-performance CMOS (Hi-CMOSII) technology and a high-speed circuit technique, a fully static 4096-word by one-bit RAM with typical address access time of 18 ns and power dissipation of 150 mW has been designed. The power-access-time product realized by the design is almost an order of magnitude better than existing NMOS 4K static RAMs. Moreover, to produce low-cost high-density static RAMs, a new redundancy technique utilizing laser shorting of intrinsic polysilicon is proposed.
Keywords :
Field effect integrated circuits; Integrated memory circuits; Large scale integration; Random-access storage; field effect integrated circuits; integrated memory circuits; large scale integration; random-access storage; CMOS technology; Coupling circuits; High speed integrated circuits; Integrated circuit technology; MOS devices; MOSFETs; Power dissipation; Transistors; Very large scale integration; Virtual manufacturing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1981.1051621
