DocumentCode
891174
Title
A DOL CMOS static memory cell
Author
Elmasry, Mohamed I. ; Peterson, Luverne R.
Volume
16
Issue
5
fYear
1981
Firstpage
466
Lastpage
471
Abstract
A new CMOS static memory cell, called the double-lambda diode (DOL), is described. It offers the speed and the power dissipation advantages of conventional CMOS static memory cells at half the area. The cell uses complementary depletion MOS devices. The processing technology is based on a twin-tub CMOS process. Using 2.5 /spl mu/m design rules the cell area is 500 /spl mu/m/SUP 2/. In addition, a 300 /spl mu/m/SUP 2/ single-lambda diode (SIL) cell using a poly resistor as a load is discussed. Comparisons of these cells with other MOS static memory cells are presented.
Keywords
Field effect integrated circuits; Integrated memory circuits; Random-access storage; field effect integrated circuits; integrated memory circuits; random-access storage; CMOS technology; Coils; Diodes; Flip-flops; MOS devices; MOSFETs; Power dissipation; Random access memory; Resistors; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1981.1051624
Filename
1051624
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