DocumentCode
891203
Title
A dual offset gate thin-film transistor
Author
Wagner, R.G.
Volume
55
Issue
7
fYear
1967
fDate
7/1/1967 12:00:00 AM
Firstpage
1217
Lastpage
1218
Abstract
A four-terminal thin-film transistor which provides voltage amplification with variable transconductance and threshold is described. The device structure incorporates the novel feature of asymmetric insulated gates on the opposite faces of a polycrystalline cadmium selenide film. Experimental data describing the device operation are presented.
Keywords
Admittance; Computational Intelligence Society; Computer networks; Equations; Frequency; Testing; Thin film transistors; Tree graphs; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.5798
Filename
1447728
Link To Document