• DocumentCode
    891274
  • Title

    An nMOS VLSI process for fabrication of a 32-bit CPU chip

  • Author

    Mikkelson, James M. ; Hall, Lawrence A. ; Malhotra, Arun K. ; Seccombe, Dana S. ; Wilson, Martin S.

  • Volume
    16
  • Issue
    5
  • fYear
    1981
  • Firstpage
    542
  • Lastpage
    547
  • Abstract
    An overview is given of a silicon-gate NMOS fabrication process used to realize a 450000 transistor, 32-bit single-chip CPU that operates at a worst case 18 MHz clock frequency. The technology utilizes 1.5-/spl mu/m lines and 1.0-/spl mu/m spaces on all critical levels, and provides tungsten dual layer metallization. The device and interconnect structure for this 8-mask process is outlined as a sequence through the process flow. Linewidth and alignment statistics are given for the optical reduction-projection step-and-repeat lithography used in this technology.
  • Keywords
    Field effect integrated circuits; Integrated circuit technology; Large scale integration; Metallisation; Microprocessor chips; field effect integrated circuits; integrated circuit technology; large scale integration; metallisation; microprocessor chips; Clocks; Fabrication; Frequency; MOS devices; Metallization; Optical interconnections; Space technology; Statistics; Tungsten; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1981.1051635
  • Filename
    1051635