Title :
An nMOS VLSI process for fabrication of a 32-bit CPU chip
Author :
Mikkelson, James M. ; Hall, Lawrence A. ; Malhotra, Arun K. ; Seccombe, Dana S. ; Wilson, Martin S.
Abstract :
An overview is given of a silicon-gate NMOS fabrication process used to realize a 450000 transistor, 32-bit single-chip CPU that operates at a worst case 18 MHz clock frequency. The technology utilizes 1.5-/spl mu/m lines and 1.0-/spl mu/m spaces on all critical levels, and provides tungsten dual layer metallization. The device and interconnect structure for this 8-mask process is outlined as a sequence through the process flow. Linewidth and alignment statistics are given for the optical reduction-projection step-and-repeat lithography used in this technology.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Large scale integration; Metallisation; Microprocessor chips; field effect integrated circuits; integrated circuit technology; large scale integration; metallisation; microprocessor chips; Clocks; Fabrication; Frequency; MOS devices; Metallization; Optical interconnections; Space technology; Statistics; Tungsten; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1981.1051635