• DocumentCode
    891348
  • Title

    A 45 ns fully static 16K MOS ROM

  • Author

    Wong, Joseph ; Ebel, Mark ; Siu, Philip

  • Volume
    16
  • Issue
    5
  • fYear
    1981
  • Firstpage
    592
  • Lastpage
    594
  • Abstract
    Describes a fully static high speed 16 384 bit read only memory (ROM), designed and fabricated by using scaled MOS processing and innovative circuit techniques. Specially designed decoder structures and sense amplifiers enable address accessing in less than 45 ns typically. Extensive use of small signal amplification and 0 volt threshold devices reduce active power to a mere 70 mA, and when the power down option is chosen standby currents reduce to only 15 mA typically. Together with quick turnaround (contact mask programmability), and small die size (20.3K mil/SUP 2/), this ROM provides a low power, low cost alternative to bipolar PROMs.
  • Keywords
    Field effect integrated circuits; Integrated memory circuits; Large scale integration; Read-only storage; field effect integrated circuits; integrated memory circuits; large scale integration; read-only storage; Circuit synthesis; Costs; Decoding; Driver circuits; Emergency power supplies; PROM; Power dissipation; Read only memory; Silicon; Uninterruptible power systems;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1981.1051642
  • Filename
    1051642