DocumentCode
891348
Title
A 45 ns fully static 16K MOS ROM
Author
Wong, Joseph ; Ebel, Mark ; Siu, Philip
Volume
16
Issue
5
fYear
1981
Firstpage
592
Lastpage
594
Abstract
Describes a fully static high speed 16 384 bit read only memory (ROM), designed and fabricated by using scaled MOS processing and innovative circuit techniques. Specially designed decoder structures and sense amplifiers enable address accessing in less than 45 ns typically. Extensive use of small signal amplification and 0 volt threshold devices reduce active power to a mere 70 mA, and when the power down option is chosen standby currents reduce to only 15 mA typically. Together with quick turnaround (contact mask programmability), and small die size (20.3K mil/SUP 2/), this ROM provides a low power, low cost alternative to bipolar PROMs.
Keywords
Field effect integrated circuits; Integrated memory circuits; Large scale integration; Read-only storage; field effect integrated circuits; integrated memory circuits; large scale integration; read-only storage; Circuit synthesis; Costs; Decoding; Driver circuits; Emergency power supplies; PROM; Power dissipation; Read only memory; Silicon; Uninterruptible power systems;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1981.1051642
Filename
1051642
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