Abstract :
Electrical characteristics of an epitaxial GaAs FET are reported. The device is of an interdigitated structure, employing alloyed evaporated metal source and drain contacts, and an evaporated Schottky barrier gate. Transconductance of the order of 20 millimhos is obtained, a factor of ∼5 better than a silicon device of identical geometry. A cutoff frequency of ∼3 GHz is obtained. The device characteristics demonstrate the feasibility of such a device for use at microwave frequencies.
