• DocumentCode
    891499
  • Title

    Second breakdown—A comprehensive review

  • Author

    Schafft, Harry A.

  • Author_Institution
    National Bureau of Standards, Washington, D.C.
  • Volume
    55
  • Issue
    8
  • fYear
    1967
  • Firstpage
    1272
  • Lastpage
    1288
  • Abstract
    This paper is a comprehensive review of the published literature dealing with the phenomenon of second breakdown in semiconductor devices and the problems it creates in the design, fabrication, testing, and application of transistors.
  • Keywords
    Bipolar transistors; Circuits; Degradation; Electric breakdown; Heating; Helium; IEC; P-n junctions; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.5828
  • Filename
    1447758
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=891499