DocumentCode :
891506
Title :
Power thyristor rating practices
Author :
Read, J.S. ; Dyer, R.F.
Author_Institution :
General Electric Company, Auburn, N.Y.
Volume :
55
Issue :
8
fYear :
1967
Firstpage :
1288
Lastpage :
1301
Abstract :
The power thyristor is the most important semicoductor device used in the control of electric power. An explanation of thyristor ratings and rating presentation is required for the complete understanding and successful application of these devices. This paper not only explains the meaning of thyristor temperature, voltage, current, and gate ratings but also presents insights into how these ratings are developed. Both the semiconductor controlled rectifier (SCR), which is properly called a reverse blocking triode thyristor, and the bidirectional thyristor rating methods are discussed. SCR rating are further divided into those applying to phase control applications at power frequencies and those applying to high repetition rate inverter and pulse current appications.
Keywords :
Helium; Nonhomogeneous media; Power generation economics; Power semiconductor devices; Power semiconductor switches; Steady-state; Temperature dependence; Temperature measurement; Thyristors; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1967.5829
Filename :
1447759
Link To Document :
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