Title :
An NMOS comparator for a bubble memory
Author :
McCreary, James L. ; Hunt, James B.
Abstract :
A low-noise low-offset comparator was designed for a bubble memory system. The measured noise performance was 25 /spl mu/V rms or 13 nV//spl radic/Hz and the worst case offset voltage was determined to be 158 /spl mu/V. This results in a 1.30 mV comparator gray region.
Keywords :
Comparators (circuits); Field effect integrated circuits; Magnetic bubble memories; comparators (circuits); field effect integrated circuits; magnetic bubble memories; Bipolar integrated circuits; Control systems; Garnets; Integrated circuit noise; MOS devices; Magnetic domains; Magnetic films; Power system modeling; Substrates; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1981.1051663
