• DocumentCode
    891554
  • Title

    An NMOS comparator for a bubble memory

  • Author

    McCreary, James L. ; Hunt, James B.

  • Volume
    16
  • Issue
    6
  • fYear
    1981
  • Firstpage
    689
  • Lastpage
    694
  • Abstract
    A low-noise low-offset comparator was designed for a bubble memory system. The measured noise performance was 25 /spl mu/V rms or 13 nV//spl radic/Hz and the worst case offset voltage was determined to be 158 /spl mu/V. This results in a 1.30 mV comparator gray region.
  • Keywords
    Comparators (circuits); Field effect integrated circuits; Magnetic bubble memories; comparators (circuits); field effect integrated circuits; magnetic bubble memories; Bipolar integrated circuits; Control systems; Garnets; Integrated circuit noise; MOS devices; Magnetic domains; Magnetic films; Power system modeling; Substrates; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1981.1051663
  • Filename
    1051663
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=891554