Slope efficiency and dynamic range of traveling-wave multiple-quantum-well electroabsorption modulators

Author

Bin Liu ; Jongin Shim ; Yi-Jen Chiu ; Hsu Feng Chou ; Piprek, J. ; Bowers, J.E.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA

Volume

16

Issue

2

fYear

2004

Firstpage

590

Lastpage

592

Abstract

High-performance InGaAsP-InP multiple-quantum-well traveling-wave electroabsorption modulators (EAMs) have been developed for analog optical links. A high slope efficiency of >4/V at 1.55 μm for a 300-μm-long EAM is measured. A detailed study of the nonlinearity and the spurious-free dynamic range (SFDR) is presented. By optimizing the bias voltage and the input optical power, the SFDR can be improved by 10-30 dB.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; intermodulation distortion; optical communication equipment; optical fibre communication; optical transfer function; semiconductor quantum wells; 1.55 mum; 300 mum; EAM; InGaAsP-InP; SFDR; analog optical links; electroabsorption modulators; multiple-quantum-well modulators; slope efficiency; spurious-free dynamic range; Absorption; Dynamic range; High speed optical techniques; Optical distortion; Optical fiber communication; Optical modulation; Quantum well devices; Radio frequency; Tellurium; Transfer functions;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.818918

Filename

1266500