DocumentCode :
891584
Title :
Graphical analysis of the I-V characteristics of generalized p-n-p-n devices
Author :
Gibbons, James F.
Author_Institution :
Stanford University, Stanford, Calif.
Volume :
55
Issue :
8
fYear :
1967
Firstpage :
1366
Lastpage :
1374
Abstract :
A new form of the basic equation for the I-V characteristics of a generalized p-n-p-n device is derived. Approximations are then introduced to obtain a simplified basic equation in which all current-dependent terms appear on one side of the equation and all voltage-dependent terms on the other. A graphical technique for solving the simplified device equation is then described and used to develop and illuminate the family resemblance among a large number of related p-n junction devices; viz., the p-n junction diode, the p-n-p diode, the p-n-p transistor, the p-n-p-n diode, and the p-n-p-n triode.
Keywords :
Charge carrier processes; Diodes; Educational institutions; Electrons; Equations; Helium; P-n junctions; Solid state circuits; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1967.5837
Filename :
1447767
Link To Document :
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