Title :
SDW MOSFETs in LSI analog circuit design
Author :
Hamdy, Esmat Z. ; Elmasry, Mohamed I.
fDate :
2/1/1982 12:00:00 AM
Abstract :
Single-device-well (SDW) MOSFETs are based on merging two devices-a surface and a buried MOSFET to share the same device well and the same gate. They offer flexible circuit structures in the design of LSI analog circuit blocks with a circuit area saving which ranges typically from 30-60 percent. The authors discuss in detail the design and the analysis of SDW source followers and difference stages. It also gives examples of SDW circuit configurations for current sources, potential dividers, and output stages.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Large scale integration; Linear integrated circuits; field effect integrated circuits; integrated circuit technology; large scale integration; linear integrated circuits; Analog circuits; CMOS technology; Diodes; Electron mobility; Impurities; Large scale integration; MOSFETs; Merging; Permittivity; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1982.1051677
