• DocumentCode
    891726
  • Title

    Stability problems in transistor power amplifiers

  • Author

    MÜller, Otward ; Figel, William G.

  • Author_Institution
    General Electric Company, Lynchburg, Va.
  • Volume
    55
  • Issue
    8
  • fYear
    1967
  • Firstpage
    1458
  • Lastpage
    1466
  • Abstract
    For devices to be useful, they must be applied in circuits. Expensive power transistors can be destroyed by undesired oscillations and instabilities. Furthermore, troublesome unwanted spurious frequencies must be avoided. The problem of stability is complicated by the fact that a class C amplifier represents the superposition of a linear class A amplifier and a nonlinear instabilities can occur. This paper discusses different physical transistor effects which could be responsible for such instabilities. It tries to clarify several aspects of the stability problem in RF power amplifiers. It is shown that this problem can be solved, at least to a certain extent, if one increases the stability of a hypothetical superimposed "class A" amplifier in the critical frequency range F1< F < F2. In this region the transistor is potentially unstable due to internal feedback. The upper limit F2of the critical frequency range is given approximately by one-half the transconductance cutoff frequency. F2may be much lower than the operating carrier frequency. Rules for the design of stable RF power amplifiers are given.
  • Keywords
    Batteries; Capacitors; Circuit stability; Frequency domain analysis; Power amplifiers; Power supplies; Radio frequency; Radiofrequency amplifiers; Thyristors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.5851
  • Filename
    1447781