Title :
Dual Gunn device oscillator with 10mW at 280 GHz
Author_Institution :
Sch. of Electron. & Electr. Eng., Univ. of Leeds, Leeds
Abstract :
The performance of an in-line WR-6 waveguide power combiner was evaluated with three second-harmonic InP Gunn devices around 280 GHz. The spacing between the two waveguide cavities was varied using WR-6 waveguide spacers. In one configuration, an output power of 10.5 mW was measured at a second-harmonic frequency of 280.7 GHz. This output power corresponds to an overall DC-to-RF conversion efficiency of 0.33% and a power-combining efficiency of more than 110%.
Keywords :
Gunn oscillators; III-V semiconductors; indium compounds; power combiners; DC-RF conversion efficiency; InP; dual Gunn device oscillator; frequency 280 GHz; frequency 280.7 GHz; in-line WR-6 waveguide power combiner; power 10 mW; power 10.5 mW; power-combining efficiency; second-harmonic Gunn device; waveguide cavity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070936