DocumentCode :
891792
Title :
Dual Gunn device oscillator with 10mW at 280 GHz
Author :
Eisele, H.
Author_Institution :
Sch. of Electron. & Electr. Eng., Univ. of Leeds, Leeds
Volume :
43
Issue :
11
fYear :
2007
Firstpage :
636
Lastpage :
638
Abstract :
The performance of an in-line WR-6 waveguide power combiner was evaluated with three second-harmonic InP Gunn devices around 280 GHz. The spacing between the two waveguide cavities was varied using WR-6 waveguide spacers. In one configuration, an output power of 10.5 mW was measured at a second-harmonic frequency of 280.7 GHz. This output power corresponds to an overall DC-to-RF conversion efficiency of 0.33% and a power-combining efficiency of more than 110%.
Keywords :
Gunn oscillators; III-V semiconductors; indium compounds; power combiners; DC-RF conversion efficiency; InP; dual Gunn device oscillator; frequency 280 GHz; frequency 280.7 GHz; in-line WR-6 waveguide power combiner; power 10 mW; power 10.5 mW; power-combining efficiency; second-harmonic Gunn device; waveguide cavity;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20070936
Filename :
4216366
Link To Document :
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