DocumentCode :
891807
Title :
High-speed low-power silicon MESFET parallel multipliers
Author :
Hartgring, Cornelis D. ; Rosario, Binoy A. ; Pickett, James M.
Volume :
17
Issue :
1
fYear :
1982
fDate :
2/1/1982 12:00:00 AM
Firstpage :
69
Lastpage :
73
Abstract :
The design of fast low-power silicon LSI MESFET parallel multipliers is studied. The architecture of the multipliers and the designs of the functional blocks are discussed. The overall performance of the multipliers is estimated from the simulated performances of the functional blocks and from system simulations with a logic simulator. The actual performance of 8×8 and 10×10 bit TTL-compatible multipliers, fabricated with a 2.5 μm silicon MESFET technology (1.5-2 μm effective dimensions) is compared to the simulations.
Keywords :
Digital arithmetic; Digital integrated circuits; Elemental semiconductors; Field effect integrated circuits; Large scale integration; Schottky gate field effect transistors; Signal processing; Silicon; digital arithmetic; digital integrated circuits; elemental semiconductors; field effect integrated circuits; large scale integration; signal processing; silicon; Adders; Circuit simulation; Digital signal processing; Laboratories; Large scale integration; Logic; MESFET circuits; Performance evaluation; Propagation delay; Silicon;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1982.1051688
Filename :
1051688
Link To Document :
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