Title :
Charge storage in metal-silicon nitride-silicon capacitors
Author :
Hutchins, C.L. ; Lade, R.W.
Abstract :
Charge storage in MNS capacitors is presented as a function of time with temperature as a parameter. Activation energies for shifts of flat-band voltage are found to be 0.02 eV and 0.1 eV for two samples that have different deposition parameters.
Keywords :
Capacitors; Degradation; Magnetic flux; Pulse measurements; Silicon; Superconducting films; Superconducting magnets; Superconductivity; Transistors; Writing;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.5861
