DocumentCode
891873
Title
Optimization of Diode Structures for Monolithic Integrated Microwave Circuits
Author
Battershall, Barry W. ; Emmons, Stephen P.
Volume
16
Issue
7
fYear
1968
fDate
7/1/1968 12:00:00 AM
Firstpage
445
Lastpage
450
Abstract
Device requirements of a medium power Ku-band reflective phase shifter are reviewed indicating a requirement for a diode with a 4-Terrahertz cut-off frequency. Various structures are examined to test their suitability for integration and feasibility for meeting specifications. A "pocket version" of a surface oriented device design is chosen and described. It is shown to meet or exceed all electrical requirements while providing for compatibility with final integration into the circuit.
Keywords
Forward contracts; Frequency; Integrated circuit technology; Microwave circuits; Microwave devices; P-i-n diodes; Phase shifters; Semiconductor diodes; Silicon; Switches;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1968.1126716
Filename
1126716
Link To Document