Properties of Evaporated and Sputtered TaSi2 Films and the Influence of the Residual Gas Composition

Results on the electrical resistivity, the stress, and the etching behavior of TaSi₂ films evaporated under various residual gas conditions, and the correlations to changes in the crystalline structure as determined by X-ray diffractometer measurements, are presented. The influence of substrate temperature on the behavior of the evaporated TaSi₂ films is discussed. For low substrate temperatures, evaporated TaSi₂ films are compared to RF sputtered films. The results show that the deposition conditions have to be carefully controlled to ensure high-quality TaSi₂ films.