DocumentCode :
892015
Title :
Poly (Phenyl Methacrylate-Co-Methacrylic Acid) as a Dry-Etching Durable Positive Electron Resist
Author :
Harada, Kanako
Volume :
17
Issue :
2
fYear :
1982
fDate :
4/1/1982 12:00:00 AM
Firstpage :
148
Lastpage :
154
Abstract :
Copolymers of phenyl methacrylate and methacrylic acid (phi-MAC) have been investigated as dry-etching durable positive electron resists. phi-MAC´s are preheated above 170°C to crosslink the polymers by intermolecular acid anhydride bonds. The crosslinked phi-MAC´s become insoluble and do not swell even in development with strong solvents. They also have excellent thermal stability. These properties contribute to their high sensitivity of 5 µC/cm2, gamma(contrast) = 2.0, and resolution finer than 0.2-μm line patterns (65 μC/cm2). phi-MAC´s have excellent dry-etching durabilities (e.g., 2 times stronger than PMMA in reactive sputter etching) and good adhesion to the substrate due to the protective effect of benzene rings and the adherent effect of carboxylic acid groups, respectively. The good properties of phi-MAC´s make them prospective in the submicrometer electron lithography.
Keywords :
Electron resists; Integrated circuit technology; Large scale integration; Polymer films; Adhesives; Anisotropic magnetoresistance; Electrons; Lithography; Polymers; Protection; Resists; Solvents; Sputter etching; Thermal stability;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1982.1051708
Filename :
1051708
Link To Document :
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