Title :
Neutron-induced single event upsets in static RAMS observed a 10 km flight attitude
Author :
Olsen, J. ; Becher, P.E. ; Fynbo, P.B. ; Raaby, P. ; Schultz, J.
Author_Institution :
Riso Nat. Lab., Roskilde, Denmark
fDate :
4/1/1993 12:00:00 AM
Abstract :
Observations of 14 neutron-induced single event upsets (SEUs) in static memory devices (SRAMs) at commercial aircraft flight altitudes are described. The observed SEU rate at a 10 km flight altitude based on an exposure of 160 standard 256 kb CMOS SRAMs is 4.8×10-8 upsets/b/day. In the laboratory, 117 SRAMs of two different brands were irradiated with fast neutrons from a Pu-Be source. A total of 176 SEUs have been observed, including two SEU pairs. The upset rates from the laboratory tests are compared to those found in the airborne SRAMs
Keywords :
CMOS integrated circuits; SRAM chips; aircraft instrumentation; neutron effects; 10 km; 256×103 Byte; CMOS; SRAMs; fast neutrons; neutron-induced single event upsets; static RAMS; static memory devices; Aircraft; Computer aided manufacturing; Computer errors; Laboratories; Neutrons; Random access memory; Read-write memory; Single event transient; Single event upset; System testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
