• DocumentCode
    892129
  • Title

    Fabrication of High-Performance LDDFET´s with Oxide Sidewall-Spacer Technology

  • Author

    Tsang, Paul J. ; Ogura, Seiki ; Walker, William W. ; Shepard, Joseph F. ; Critchlow, Dale L.

  • Volume
    17
  • Issue
    2
  • fYear
    1982
  • fDate
    4/1/1982 12:00:00 AM
  • Firstpage
    220
  • Lastpage
    226
  • Abstract
    A fabrication process for the Lightly Doped Drain/Source Field-Effect Transistor, LDDFET, that utilizes RIE produced SiO2 sidewall spacers is described. The process is compatible with most conventional polysilicon-gated FET processes and needs no additional photo-masking steps. Excellent control and reproducibility of the n- region of the LDD device are obtained. Measurements from dynamic clock generators have shown that LDDFET´s have as much as 1.9x performance advantage over conventional devices.
  • Keywords
    Field effect integrated circuits; Insulated gate field effect transistors; Integrated circuit technology; Large scale integration; Circuit optimization; Clocks; Etching; FETs; Fabrication; Integrated circuit measurements; Reproducibility of results; Senior members; Space technology; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1982.1051720
  • Filename
    1051720
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=892129