• DocumentCode
    892152
  • Title

    Single event upset in avionics

  • Author

    Taber, A. ; Normand, E.

  • Author_Institution
    IBM Federal Systems Co., Owego, NY, USA
  • Volume
    40
  • Issue
    2
  • fYear
    1993
  • fDate
    4/1/1993 12:00:00 AM
  • Firstpage
    120
  • Lastpage
    126
  • Abstract
    Data from military/experimental flights and laboratory testing indicate that typical non-radiation-hardened 64 K and 256 K static random access memories (SRAMs) can experience a significant soft upset rate at aircraft altitudes due to energetic neutrons created by cosmic ray interactions in the atmosphere. It is suggested that error detection and correction circuitry be considered for all avionics designs containing large amounts of semiconductor memory
  • Keywords
    SRAM chips; aircraft instrumentation; error correction; error detection; military equipment; neutron effects; 256×103 Bytes; 64×103 Bytes; SRAMs; aircraft altitudes; avionics; error detection and correction circuitry; single event upset; static random access memories; Aerospace electronics; Atmosphere; Circuit testing; Error correction; Laboratories; Military aircraft; Neutrons; SRAM chips; Semiconductor memory; Single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.212327
  • Filename
    212327
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=892152