Two-Dimensional Dynamic Analysis of Short-Channel Thin-Film MOS Transistors Using a Minicomputer

A computer program is described for simulating two dimensional thin-film MOS transistors on a minicomputer. Data are presented showing the variation of internal carrier density with time until a steady-state condition is reached. These data show the formation of a drain-induced back channel whose conduction properties depend on the back-channel length and carrier mobility. For channel lengths below 2.0 μm, the two-dimensional steady-state drain current is shown to fit the expression...