Title :
A 16K-Bit Static IIL RAM with 25-ns Access Time
Author :
Inabe, Yasunobu ; Hayashi, Toshio ; Kawarada, Kuniyasu ; Miwa, Hideo ; Ogiue, K.
fDate :
4/1/1982 12:00:00 AM
Abstract :
A 16 384 X 1-bit RAM with 25-ns access time, 600 -mW power dissipation, and 33-mm/sup 2/ chip size has been developed. Excellent speed-power performance with high packing density has been achieved by an oxide isolation technology in conjunction with novel ECL circuit techniques and IIL flip-flop memory cells, 980 /spl mu/m/sup 2/ (35 /spl mu/m X 28 /spl mu/m) in cell size. Development results have shown that IIL flip-flop memory cell is a trump card for assuring achievement of a high-performance large-capacity bipolar RAM, in the above 16K-bit/chip area.
Keywords :
Bipolar integrated circuits; Flip-flops; Integrated circuit technology; Integrated injection logic; Integrated memory circuits; Random-access storage; Flip-flops; Isolation technology; MESFET circuits; MESFET integrated circuits; Power dissipation; Random access memory; Read-write memory; Schottky barriers; Solid modeling; Solid state circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1982.1051736
