DocumentCode :
892326
Title :
Programming Mechanism of Polysilicon Resistor Fuses
Author :
Greve, David W.
Volume :
17
Issue :
2
fYear :
1982
fDate :
4/1/1982 12:00:00 AM
Firstpage :
349
Lastpage :
354
Abstract :
The programming characteristics of polysilicon resistor fuses were investigated. It was found that an open circuit occurs only after the fuse makes a transition to a second-breakdown state in which the current flow is mainly through a molten filament. Filamentary current flow is stable since the resistivity of silicon decreases abruptly upon melting. A simple model was developed which explains the observed I-V characteristics. Fuse opening occurs when the current in second breakdown exceeds a critical current lmin which depends strongly on the fuse thickness and the presence or absence of a passivation layer over the fuse. The gap forms at the positive end, suggesting that the silicon ions move by drift in the applied electric field.
Keywords :
Electric fuses; Integrated circuit technology; Large scale integration; Resistors; Silicon; Circuits; Contact resistance; Electric breakdown; Fuses; Power dissipation; Resistors; Silicon; Temperature; Thermal conductivity; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1982.1051740
Filename :
1051740
Link To Document :
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