Title :
A Closed-Form Threshold Voltage Expression for a Small-Geometry MOSFET
Author :
Akers, L.A. ; Chao, C.S.
fDate :
4/1/1982 12:00:00 AM
Abstract :
An analytical expression is developed to predict the threshold voltage of a small-geometry MOSFET. The expression includes the effects of field doping encroachment at the channel edges, and charge sharing with the source and drain regions.
Keywords :
Insulated gate field effect transistors; Semiconductor device models; Chaos; Doping; Electrodes; Geometry; Implants; MOS devices; MOSFET circuits; Semiconductor process modeling; Solid modeling; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1982.1051748
