Title :
GaAs MESFET ICs for gigabit logic applications
Author :
Nuzillat, Gérard ; Perea, Ernesto H. ; Bert, Georges ; Damay-Kavala, Fatma ; Gloanec, Maurice ; Peltier, Michel ; Ngu, Tung Pham ; Arnodo, Christian
fDate :
6/1/1982 12:00:00 AM
Abstract :
This paper gives an overview of the basic concepts used in the design and fabrication of gallium arsenide MESFET integrated circuits intended for gigabit logic applications. The present status of speed-power performances, packing densities, and integration levels is presented on the basis of some MSI and LSI MESFET IC realizations made possible by the principal GaAs logic approaches to date. Finally, the potential field of application and future trends of GaAs IC technology are assessed.
Keywords :
Field effect integrated circuits; Gallium arsenide; III-V semiconductors; Integrated circuit technology; Integrated logic circuits; Large scale integration; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; integrated logic circuits; large scale integration; Application specific integrated circuits; Digital integrated circuits; Electron mobility; Fabrication; Gallium arsenide; Large scale integration; Logic circuits; Logic design; MESFET integrated circuits; Silicon;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1982.1051777
