DocumentCode
892853
Title
A simple model of ion-implanted JFETs valid in both the quadratic and the subthreshold regions
Author
Sansen, Willy M C ; Das, Carl J M
Volume
17
Issue
4
fYear
1982
Firstpage
658
Lastpage
666
Abstract
A simple model is derived which describes the behavior of JFETs in the quadratic as well as in the subthreshold mode of operation. This model is characterized by the addition of one subthreshold parameter I/SUB 0/ and only one parameter K for the transition region, to the quadratic MOS model of Shichman and Hodges. The implementation in the program SPICE is discussed. Finally, the model is verified for a number of p-channel JFETs of a conventional bipolar p-JFET technology.
Keywords
Circuit analysis computing; Ion implantation; Junction gate field effect transistors; Semiconductor device models; circuit analysis computing; ion implantation; junction gate field effect transistors; semiconductor device models; Application specific integrated circuits; Circuit synthesis; Integrated circuit technology; JFETs; Physics; Power dissipation; SPICE; Transconductance; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1982.1051794
Filename
1051794
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