• DocumentCode
    892919
  • Title

    Fabrication and characterisation of 200 mm germanium-on-insulator (GeOI) substrates made from bulk germanium

  • Author

    Deguet, C. ; Sanchez, L. ; Akatsu, T. ; Allibert, F. ; Dechamp, J. ; Madeira, F. ; Mazen, F. ; Tauzin, A. ; Loup, V. ; Richtarch, C. ; Mercier, D. ; Signamarcheix, T. ; Letertre, F. ; Depuydt, B. ; Kernevez, N.

  • Volume
    42
  • Issue
    7
  • fYear
    2006
  • fDate
    3/30/2006 12:00:00 AM
  • Firstpage
    415
  • Lastpage
    417
  • Abstract
    The formation and detailed characterisations of a 200 mm germanium-on-insulator substrate made from germanium bulk material as donor wafer using the Smart CutTM technology is reported. Detailed characterisations of final GeOI structures are presented: final roughness, defectivity evaluation, thickness measurement, and electrical characterisation.
  • Keywords
    elemental semiconductors; germanium; semiconductor-insulator boundaries; thickness measurement; 200 mm; Ge; GeOI structures; Smart Cut™ technology; defectivity evaluation; donor wafer; electrical characterisation; final roughness; germanium bulk material; germanium-on-insulator substrates; thickness measurement;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20060208
  • Filename
    1618314
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=892919