Author :
Deguet, C. ; Sanchez, L. ; Akatsu, T. ; Allibert, F. ; Dechamp, J. ; Madeira, F. ; Mazen, F. ; Tauzin, A. ; Loup, V. ; Richtarch, C. ; Mercier, D. ; Signamarcheix, T. ; Letertre, F. ; Depuydt, B. ; Kernevez, N.
Abstract :
The formation and detailed characterisations of a 200 mm germanium-on-insulator substrate made from germanium bulk material as donor wafer using the Smart CutTM technology is reported. Detailed characterisations of final GeOI structures are presented: final roughness, defectivity evaluation, thickness measurement, and electrical characterisation.
Keywords :
elemental semiconductors; germanium; semiconductor-insulator boundaries; thickness measurement; 200 mm; Ge; GeOI structures; Smart Cut™ technology; defectivity evaluation; donor wafer; electrical characterisation; final roughness; germanium bulk material; germanium-on-insulator substrates; thickness measurement;
