DocumentCode :
893032
Title :
A simple technique for improving lateral p-n-p transistor performance
Author :
Krishna, Surinder ; Ramde, Amolak
Volume :
17
Issue :
4
fYear :
1982
Firstpage :
781
Lastpage :
783
Abstract :
Outlines a simple and elegant method that would simultaneously increase the current gain, frequency response, and voltage capability of the lateral p-n-p transistor. This is accomplished by introducing aluminium in the collector regions of the device.
Keywords :
Bipolar transistors; Frequency response; bipolar transistors; frequency response; Aluminum; Boron; Circuit synthesis; Circuit testing; Circuit topology; Frequency response; Multiplying circuits; Performance gain; Substrates; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1982.1051813
Filename :
1051813
Link To Document :
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