• DocumentCode
    893032
  • Title

    A simple technique for improving lateral p-n-p transistor performance

  • Author

    Krishna, Surinder ; Ramde, Amolak

  • Volume
    17
  • Issue
    4
  • fYear
    1982
  • Firstpage
    781
  • Lastpage
    783
  • Abstract
    Outlines a simple and elegant method that would simultaneously increase the current gain, frequency response, and voltage capability of the lateral p-n-p transistor. This is accomplished by introducing aluminium in the collector regions of the device.
  • Keywords
    Bipolar transistors; Frequency response; bipolar transistors; frequency response; Aluminum; Boron; Circuit synthesis; Circuit testing; Circuit topology; Frequency response; Multiplying circuits; Performance gain; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1982.1051813
  • Filename
    1051813
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=893032