DocumentCode
893041
Title
Base resistance of I/sup 2/L structures: its determination and its influence on upward current gain
Author
Koopmans, Jan M. ; Van Der Meij, C.J.
Volume
17
Issue
4
fYear
1982
Firstpage
783
Lastpage
786
Abstract
A sectionalized structure-oriented model is used for the description of the DC behavior of a multicollector integrated injection logic (I/SUP 2/L) gate. The model includes high-injection effects in the p-n-p transistor base and lateral base resistance in the n-p-n transistor. Methods for measuring the base resistance are outlined. The validity of the obtained model is demonstrated by measurement and simulation of two methods of measuring upward current gain.
Keywords
Bipolar integrated circuits; Electric current measurement; Electric resistance measurement; Integrated injection logic; Semiconductor device models; bipolar integrated circuits; electric current measurement; electric resistance measurement; integrated injection logic; semiconductor device models; Conductivity; Current measurement; Current supplies; Density estimation robust algorithm; Diodes; Electrical resistance measurement; Equivalent circuits; Gain measurement; Logic gates; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1982.1051814
Filename
1051814
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