Title :
Base resistance of I/sup 2/L structures: its determination and its influence on upward current gain
Author :
Koopmans, Jan M. ; Van Der Meij, C.J.
Abstract :
A sectionalized structure-oriented model is used for the description of the DC behavior of a multicollector integrated injection logic (I/SUP 2/L) gate. The model includes high-injection effects in the p-n-p transistor base and lateral base resistance in the n-p-n transistor. Methods for measuring the base resistance are outlined. The validity of the obtained model is demonstrated by measurement and simulation of two methods of measuring upward current gain.
Keywords :
Bipolar integrated circuits; Electric current measurement; Electric resistance measurement; Integrated injection logic; Semiconductor device models; bipolar integrated circuits; electric current measurement; electric resistance measurement; integrated injection logic; semiconductor device models; Conductivity; Current measurement; Current supplies; Density estimation robust algorithm; Diodes; Electrical resistance measurement; Equivalent circuits; Gain measurement; Logic gates; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1982.1051814
