Title :
Optical loss measurements on GaAs/GaAlAs single-mode waveguide Y-junctions and waveguide bends
Author :
Al-hemyari, Kadhair ; Doughty, G.F. ; Wilkinson, C.D.W. ; Kean, A.H. ; Stanley, C.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
2/1/1993 12:00:00 AM
Abstract :
The propagation losses in GaAs/GaAlAs double heterostructure single-mode waveguide symmetrical Y-junctions were measured as a function of the full angle α of the Y-junction. It was found that it was possible experimentally to identify whether the Y-junction waveguide was single mode. The bending loss in bent waveguides, due to the change in the axial direction of the waveguide, was measured as a function of the bending angle α/2. It was also experimentally confirmed that the bending loss was significantly reduced by increasing the lateral optical field confinement, i.e., by increasing the etch depth of the rib waveguide
Keywords :
III-V semiconductors; aluminium compounds; bending; gallium arsenide; integrated optics; optical loss measurement; optical waveguides; GaAs-GaAlAs; axial direction; bending angle; bending loss; bent waveguides; double heterostructure; etch depth; full angle; integrated optics; lateral optical field confinement; optical loss measurements; propagation losses; rib waveguide; semiconductors; single-mode waveguide Y-junctions; symmetrical Y-junctions; waveguide bends; Gallium arsenide; Loss measurement; Optical attenuators; Optical interferometry; Optical losses; Optical modulation; Optical waveguides; Propagation losses; Semiconductor laser arrays; Waveguide junctions;
Journal_Title :
Lightwave Technology, Journal of