Optical loss measurements on GaAs/GaAlAs single-mode waveguide Y-junctions and waveguide bends

Author

Al-hemyari, Kadhair ; Doughty, G.F. ; Wilkinson, C.D.W. ; Kean, A.H. ; Stanley, C.R.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

Volume

11

Issue

2

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

272

Lastpage

276

Abstract

The propagation losses in GaAs/GaAlAs double heterostructure single-mode waveguide symmetrical Y-junctions were measured as a function of the full angle α of the Y-junction. It was found that it was possible experimentally to identify whether the Y-junction waveguide was single mode. The bending loss in bent waveguides, due to the change in the axial direction of the waveguide, was measured as a function of the bending angle α/2. It was also experimentally confirmed that the bending loss was significantly reduced by increasing the lateral optical field confinement, i.e., by increasing the etch depth of the rib waveguide

Keywords

III-V semiconductors; aluminium compounds; bending; gallium arsenide; integrated optics; optical loss measurement; optical waveguides; GaAs-GaAlAs; axial direction; bending angle; bending loss; bent waveguides; double heterostructure; etch depth; full angle; integrated optics; lateral optical field confinement; optical loss measurements; propagation losses; rib waveguide; semiconductors; single-mode waveguide Y-junctions; symmetrical Y-junctions; waveguide bends; Gallium arsenide; Loss measurement; Optical attenuators; Optical interferometry; Optical losses; Optical modulation; Optical waveguides; Propagation losses; Semiconductor laser arrays; Waveguide junctions;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.212538

Filename

212538