DocumentCode
893168
Title
An enhanced 16K E/sup 2/PROM
Author
Gee, Lubin ; Cheng, Pearl ; Bobra, Yogendra ; Mehta, Rustam
Volume
17
Issue
5
fYear
1982
Firstpage
828
Lastpage
832
Abstract
An enhanced 16K E/SUP 2/PROM is described. It makes the E/SUP 2/PROM to microprocessor interface simple to implement. It frees up the system bus during e/SUP 2/PROM programming by latching addresses, data, and all control signals on chip. It provides minimum ERASE/WRITE, time via a novel feedback subsystem that monitors the amount of charge on the floating gate of the cell and signals to the system by the READY/BUSY output pin when enough charge has been added to or removed from the gate. With an external V/SUB pp/ voltage fixed supply, the E/SUP 2/PROM generates its own RC ramp during ERASE/WRITE, increasing the endurance of the storage cell. On-chip control circuitry provides ERASE before WRITE, making writing appear as a single step to the user.
Keywords
Integrated memory circuits; integrated memory circuits; Capacitors; EPROM; Fault location; PROM; Pulse generation; Switches; Threshold voltage; Timing; Turning;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1982.1051826
Filename
1051826
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