• DocumentCode
    893168
  • Title

    An enhanced 16K E/sup 2/PROM

  • Author

    Gee, Lubin ; Cheng, Pearl ; Bobra, Yogendra ; Mehta, Rustam

  • Volume
    17
  • Issue
    5
  • fYear
    1982
  • Firstpage
    828
  • Lastpage
    832
  • Abstract
    An enhanced 16K E/SUP 2/PROM is described. It makes the E/SUP 2/PROM to microprocessor interface simple to implement. It frees up the system bus during e/SUP 2/PROM programming by latching addresses, data, and all control signals on chip. It provides minimum ERASE/WRITE, time via a novel feedback subsystem that monitors the amount of charge on the floating gate of the cell and signals to the system by the READY/BUSY output pin when enough charge has been added to or removed from the gate. With an external V/SUB pp/ voltage fixed supply, the E/SUP 2/PROM generates its own RC ramp during ERASE/WRITE, increasing the endurance of the storage cell. On-chip control circuitry provides ERASE before WRITE, making writing appear as a single step to the user.
  • Keywords
    Integrated memory circuits; integrated memory circuits; Capacitors; EPROM; Fault location; PROM; Pulse generation; Switches; Threshold voltage; Timing; Turning;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1982.1051826
  • Filename
    1051826