• DocumentCode
    893193
  • Title

    A 40 ns CMOS E/SUP 2/PROM

  • Author

    Stewart, Roger G. ; Plus, Dora

  • Volume
    17
  • Issue
    5
  • fYear
    1982
  • Firstpage
    841
  • Lastpage
    846
  • Abstract
    New high-performance CMOS circuit techniques have been developed and used to build an 8K E/SUP 2/PROM with an access time of 38 ns at 5 V. Using standard CMOS/SOS technology, the device dissipates only 0.8 mW quiescent power at 5 V and 60 mW at 1 MHz. A midpoint precharge and sense technique permits operation form a supply voltage of 4-12 V.
  • Keywords
    Field effect integrated circuits; field effect integrated circuits; Decoding; Delay; Detectors; Logic circuits; Logic functions; PROM; Power dissipation; Power generation; Signal generators; Trigger circuits;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1982.1051828
  • Filename
    1051828
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=893193