A nitride-barrier avalanche-injection EAROM

A 10 nm graded band-gap insulator obtained by oxidizing the surface of a very thin thermal nitride film has been used as the first insulator of a floating gate avalanche-injection EAROM cell. A low-energy barrier of thermal nitride and a cell optimization considering the capacitive coupling of the floating gate to the drain has enabled low single-polar voltage alterability on a 2 kbit test vehicle. Good write/erase endurance has been also obtained owing to the low injection field applied to the first insulator of the avalanche injection approach.