DocumentCode
893291
Title
A 6K-gate CMOS gate array
Author
Tago, Haruyuki ; Kobayashi, Teruo ; Kobayashi, Masaru ; Moriya, Takahiko ; Yamamoto, Shin´Ichiro
Volume
17
Issue
5
fYear
1982
Firstpage
907
Lastpage
912
Abstract
Combining advanced 2 /spl mu/m CMOS technology with a newly developed double layer metallization technology, a high-performance 6K-gate CMOS gate array has been developed, featuring an inverter propagation delay time of 0.4 ns with a power dissipation of 10 /spl mu/W/MHz/stage. As a demonstration vehicle of the high-performance gate array, a 16 bit/spl times/16 bit parallel multiplier has been designed and fabricated in which 3365 basic cells are used. Typical multiplying time has been measured to be 130 ns at a 5 MHz clock rate with a power dissipation of 275 mW.
Keywords
Cellular arrays; cellular arrays; CMOS process; CMOS technology; Clocks; Contact resistance; Equivalent circuits; Etching; Macrocell networks; Shift registers; Threshold voltage; Variable structure systems;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1982.1051838
Filename
1051838
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