• DocumentCode
    893291
  • Title

    A 6K-gate CMOS gate array

  • Author

    Tago, Haruyuki ; Kobayashi, Teruo ; Kobayashi, Masaru ; Moriya, Takahiko ; Yamamoto, Shin´Ichiro

  • Volume
    17
  • Issue
    5
  • fYear
    1982
  • Firstpage
    907
  • Lastpage
    912
  • Abstract
    Combining advanced 2 /spl mu/m CMOS technology with a newly developed double layer metallization technology, a high-performance 6K-gate CMOS gate array has been developed, featuring an inverter propagation delay time of 0.4 ns with a power dissipation of 10 /spl mu/W/MHz/stage. As a demonstration vehicle of the high-performance gate array, a 16 bit/spl times/16 bit parallel multiplier has been designed and fabricated in which 3365 basic cells are used. Typical multiplying time has been measured to be 130 ns at a 5 MHz clock rate with a power dissipation of 275 mW.
  • Keywords
    Cellular arrays; cellular arrays; CMOS process; CMOS technology; Clocks; Contact resistance; Equivalent circuits; Etching; Macrocell networks; Shift registers; Threshold voltage; Variable structure systems;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1982.1051838
  • Filename
    1051838