• DocumentCode
    893307
  • Title

    Low-power SITL IC

  • Author

    Arai, Shigehisa ; Shimbo, Masashi ; Tanaka, Kiyoshi ; Watanabe, Atsuyori

  • Volume
    17
  • Issue
    5
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    919
  • Lastpage
    924
  • Abstract
    The SITL (static induction transistor logic), which operates in the bipolar mode, has the smallest PD (power delay) product in silicon technology because of the use of an extremely pure epitaxial layer. In this paper, as SITL device is which the gate and drain are self-aligned is described, centering on the DC characteristics and operation limit. It is concluded that the drain current of SIT is limited by the thermionic emission mode in a low-current region of about 1 nA over a wide temperature range, and that logic operation is limited by the effective current gain β/SUB eff/ in the low-power region. Designing SITL suitably for wide temperature and power range, the authors have developed a monolithic watch IC having an oscillation frequency of 2 MHz and a current consumption of 3.5 μA, and including bipolar circuitry on the same chip.
  • Keywords
    Integrated circuit technology; integrated circuit technology; Bipolar integrated circuits; Delay; Epitaxial layers; Frequency; Logic devices; Monolithic integrated circuits; Silicon; Temperature distribution; Thermionic emission; Watches;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1982.1051840
  • Filename
    1051840