Title :
Bragg gratings written in all-SiO2 and Ge-doped core fibers with 800-nm femtosecond radiation and a phase mask
Author :
Mihailov, Stephen J. ; Smelser, ChristopherW ; Grobnic, Dan ; Walker, Robert B. ; Lu, Ping ; Ding, Huimin ; Unruh, James
Author_Institution :
Commun. Res. Centre Canada, Ottawa, Ont., Canada
Abstract :
Femtosecond laser pulses at 800 nm and 120 fs were used to fabricate high-quality retroreflecting fiber Bragg gratings in standard Ge-doped telecom fiber (Corning SMF-28) and all-silica-core Fluorine doped cladding single-mode fiber using a deep-etch silica zero-order ed phase mask. Induced index modulations of 1.9×10-3 were achieved with peak power intensities of 2.9×1012 W/cm2 without any fiber sensitization such as hydrogen loading. The fiber gratings have annealing characteristics similar to type II damage fiber gratings and demonstrate stable operation at temperatures as high as 950°C. The grating devices exhibit low polarization dependence. The primary mechanism of induced index change results from a structural modification to the fiber core.
Keywords :
Bragg gratings; annealing; etching; germanium; high-speed optical techniques; laser materials processing; optical fibre cladding; optical fibre fabrication; optical fibre polarisation; optical modulation; phase shifting masks; 120 nm; 800 nm; 950 degC; Bragg gratings; Ge-doped core fibers; Ge-doped telecom fiber; SiO2; all-SiO2 core fibers; all-silica-core fluorine doped cladding; annealing characteristics; deep-etched silica; femtosecond direct writing; femtosecond laser pulses; femtosecond radiation; fiber sensitization; grating devices; index modulations; optical fabrication; phase mask; polarization; retroreflecting fiber Bragg gratings; single-mode fiber; ultrafast laser processing; Bragg gratings; Fiber gratings; Fiber lasers; Hydrogen; Intensity modulation; Optical fiber devices; Optical fiber polarization; Optical pulses; Silicon compounds; Telecommunication standards;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2003.822169