Title :
Nonradiative surface recombination in electron-beam pumped GaAs lasers
Author :
Lavine, J.M. ; Adams, A., Jr.
Abstract :
Measurements of threshold pumping power as a function of beam voltage and measurements of output power as a function of input power, with beam voltage as a parameter, strongly suggest that surface recombination contributes heavily to nonradiative transitions in electron-beam pumped GaAs lasers at voltages up to 30 kV, at both 4.2°K and 77°K.
Keywords :
Gallium arsenide; Laser beams; Laser excitation; Laser transitions; Power measurement; Pump lasers; Spontaneous emission; Surface emitting lasers; Threshold voltage; Voltage measurement;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.6046
