Concurrent global optimisation for microwave-device parameter estimation

Author

Linden, P A ; Fusco, V.F.

Author_Institution

Dept. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK

Volume

140

Issue

2

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

71

Lastpage

78

Abstract

A novel concurrent implementation of a global-optimisation algorithm is used to extract parameter values for MESFET equivalent-circuit models. The problem of the location of the global minimum of an error function is addressed by the use of an efficient stochastic global-optimisation program which does not require accurate parameter estimates and which operates on a multiprocessor array. The program has been used to estimate the parameter values of a process-based physical equivalent model of a MESFET under multibias small-signal operation. These results are compared with those derived from an electrical equivalent-circuit model

Keywords

Schottky gate field effect transistors; equivalent circuits; optimisation; parameter estimation; semiconductor device models; solid-state microwave devices; MESFET equivalent-circuit models; concurrent implementation; error function; global minimum; global optimisation; microwave device; multibias small-signal operation; parameter estimation; stochastic global-optimisation program;

fLanguage

English

Journal_Title

Microwaves, Antennas and Propagation, IEE Proceedings H

Publisher

iet

ISSN

0950-107X

Type

jour

Filename

212609