DocumentCode :
893621
Title :
Concurrent global optimisation for microwave-device parameter estimation
Author :
Linden, P A ; Fusco, V.F.
Author_Institution :
Dept. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK
Volume :
140
Issue :
2
fYear :
1993
fDate :
4/1/1993 12:00:00 AM
Firstpage :
71
Lastpage :
78
Abstract :
A novel concurrent implementation of a global-optimisation algorithm is used to extract parameter values for MESFET equivalent-circuit models. The problem of the location of the global minimum of an error function is addressed by the use of an efficient stochastic global-optimisation program which does not require accurate parameter estimates and which operates on a multiprocessor array. The program has been used to estimate the parameter values of a process-based physical equivalent model of a MESFET under multibias small-signal operation. These results are compared with those derived from an electrical equivalent-circuit model
Keywords :
Schottky gate field effect transistors; equivalent circuits; optimisation; parameter estimation; semiconductor device models; solid-state microwave devices; MESFET equivalent-circuit models; concurrent implementation; error function; global minimum; global optimisation; microwave device; multibias small-signal operation; parameter estimation; stochastic global-optimisation program;
fLanguage :
English
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings H
Publisher :
iet
ISSN :
0950-107X
Type :
jour
Filename :
212609
Link To Document :
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