Monolithic Integrated Modulator on Silicon for Optical Interconnects

Author

Shi, Bin ; Chang, Pak Sam ; Sun, Ke ; Xie, Ya-Hong ; Radhakrishnan, Chander ; Monbouquette, Harold G.

Author_Institution

Dept. of Mater. Sci. & Eng., California Univ., Los Angeles, CA

Volume

19

Issue

2

fYear

2007

Firstpage

55

Lastpage

57

Abstract

A modulator structure based on the electrical field modified saturation absorption is proposed. Adequate modulation depth of 90% is expected from simulation results. Thirty-six percent modulation depth and 6-dB insertion loss are achieved in the prototype device. Higher modulation depth can be achieved via improved matching of the cavity mode with the laser wavelength. With its ability of forming two-dimensional modulator array and full compatibility with standard silicon very large scale integration technology, this modulator is very suitable for the important application of chip-to-chip optical interconnects

Keywords

VLSI; electro-optical modulation; integrated optics; integrated optoelectronics; monolithic integrated circuits; optical arrays; optical interconnections; optical losses; optical saturable absorption; silicon; Si; cavity mode matching; chip-to-chip interconnects; electrical field modified saturation absorption; insertion loss; integrated modulator-on-silicon; modulation depth; monolithic integrated modulator; optical interconnects; two-dimensional modulator array; very large scale integration; Absorption; Biomedical optical imaging; Optical arrays; Optical interconnections; Optical modulation; Optical saturation; Resonance; Silicon; Stark effect; Very large scale integration; Electroabsorption (EA); modulation; optical interconnections; quantum dots (QDs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.889100

Filename

4039395